| 摘要 |
PURPOSE:To prevent any deposited material from sticking on electrodes and inner walls of etching chamber, by a method wherein the surface of an etching chamber in an etching or deposition processor utilizing gas plasma is utilized as an upper electrode while antisticking plates are provided to cover the inner walls of etching chamber. CONSTITUTION:An etching chamber 1 whose wall serves as an upper electrode is provided while a lower electrode 4 electrically insulated from the etching chamber 1 is provided. Then antisticking plates 5, 6 for reaction products to stick to are provided to cover the inner walls of etching chamber 1. The space between the lower electrode 4 and the etching chamber serving as upper electrode is impressed with a voltage to produce plasma for dryetching a substrate 7 mounted on the lower electrode 4. Finally any deposited materials during etching process are stuck on the antisticking plates 5, 6 while almost all the deposited materials inside the etching chamber 1 may be removed by periodically replacing the antisticking 5, 6 with new ones. |
