HIGH-RESOLUTION POSITIVE TYPE CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN FORMING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-resolution positive type chemically amplified resist material which contains a matrix resin obtained by a simple production method, enables fine resist pattern formation when applied to a non-photolithography process in which exposure is performed under vacuum, and suppresses dropping of a protective group in exposure.

SOLUTION: The positive type chemically amplified resist material contains a poly(4-hydroxystyrene) or its derivative in which part or all of the phenolic hydroxyl groups have been substituted by ketal groups, wherein the poly(4-hydroxystyrene) or its derivative is obtained by a production method including living radical polymerization of a styrenic monomer in the presence of a dithioester compound as a RAFT agent.

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