| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of readily and properly adjusting the impedance of an impedance adjustment unit aimed at preventing overdischarges, which is provided between an anode electrode and a processing container of a plasma processing apparatus. <P>SOLUTION: The plasma processing apparatus comprises: a high-frequency power source for applying biases; an impedance adjustment unit; a voltage measurement unit for measuring the voltage of the impedance adjustment unit; a band-pass filter interposed between the impedance adjustment unit and voltage measuring unit; and a control unit for retrieving the voltage value measured by the voltage measurement unit, while changing the impedance value of the impedance adjustment unit during generation of the plasma, calculating the value of current flowing into the anode electrode, based on the voltage value, and setting the impedance value of the impedance adjustment unit such that the current value becomes the maximum value or near the maximum value. <P>COPYRIGHT: (C)2009,JPO&INPIT |
