| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspecting method for phase shift mask and an inspecting device for phase shift mask for optimizing a criterion for size of a defect to be detected according to results (individual differences of optical characteristics) of transmissivity, phase difference, etc., by phase shift masks, and the manufacturing method of a semiconductor device. <P>SOLUTION: Disclosed is the inspecting method for phase shift mask including the steps of: previously finding an influence of at least one of the transmissivity and phase of a phase shifter exerted on transferrability of a defect present on the phase shift mask to a wafer; measuring at least one of the transmissivity and phase of a phase shifter of a phase shift mask to be inspected; setting the criterion for the defect present on the phase shift mask on the basis of the measured value of at least one of the transmissivity and phase of the phase shifter and the found influence; and inspecting the defect of the phase shift mask on the basis of the set criterion. <P>COPYRIGHT: (C)2009,JPO&INPIT |
