| 摘要 |
PROBLEM TO BE SOLVED: To provide a new diode composed of an oxide semiconductor and an organic conductor that has a simple structure and can be manufactured easily, and to provide a manufacturing method of the diode. SOLUTION: The diode 1 has a junction section 8 comprising the oxide semiconductor 2 and the organic conductor 3 formed on the oxide semiconductor 2, and the junction section 8 has Schottky junction characteristics. The oxide semiconductor 2 can preferably use an oxide semiconductor crystal, or an oxide semiconductor thin film formed on the substrate. The oxide semiconductor 2 is formed of TiO<SB>2</SB>or SrTiO<SB>3</SB>, and impurities may be added to the oxide semiconductor 2. For the organic conductor 3, a thin film formed of PEDOT:PSS can be used. The diode 1 has improved rectification characteristics and can be manufactured easily. COPYRIGHT: (C)2009,JPO&INPIT |
