| 摘要 |
A method is provided for removing reentrant stringers in the fabrication of a nanowire transistor (NWT). The method provides a cylindrical nanostructure with an outside surface axis overlying a substrate surface. The nanostructure includes an insulated semiconductor core. A conductive film is conformally deposited overlying the nanostructure, to function as a gate strap or a combination gate and gate strap. A hard mask insulator is deposited overlying the conductive film and selected regions of the hard mask are anisotropically plasma etched. As a result, a conductive film gate electrode is formed substantially surrounding a cylindrical section of nanostructure. Inadvertently, conductive film reentrant stringers may be formed adjacent the nanostructure outside surface axis, made from the conductive film. The method etches, and so removes the conductive film reentrant stringers.
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