发明名称 |
OHMIC ELECTRODE STRUCTURE AND SEMICONDUCTOR ELEMENT |
摘要 |
<p>An ohmic electrode structure is provided with a AuGeNi alloy layer (13) arranged on an n-type GaAs layer; and a laminated body composed of bonded metal layers (15, 17) arranged on the AuGeNi alloy layer (13) and barrier metal layers (16, 18) arranged on the bonded metal layers (15, 17). The laminated body is arranged for two cycles or more. On a GaAs contact layer, especially on an n-type electrode, surface diffusion of Ga in the semiconductor and Ni in the AuGeNi alloy layer required for forming ohmic contact at the n-type electrode can be suppressed. Thus, the low resistance ohmic electrode structure and a semiconductor element having such structure are provided.</p> |
申请公布号 |
WO2008120432(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
WO2008JP00294 |
申请日期 |
2008.02.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;SHIMAMOTO, TOSHITAKA;YOSHIKAWA, KENJI;MAKITA, KOUJI |
发明人 |
SHIMAMOTO, TOSHITAKA;YOSHIKAWA, KENJI;MAKITA, KOUJI |
分类号 |
H01L21/28;H01L33/00;H01S5/042 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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