| 摘要 |
<p>A ReRAM includes a high-speed write-in region (1) and a main memory region (2), each of which has a plurality of variable-resistance elements. Upon data write-in, the high-speed write-in region (1) is in a initial state, i.e., memory cells (10) in a memory cell array (11) are all reset to a non-storage state and only the memory cells specified for a storage state among the memory cells (10) corresponding to the data are set to the storage state. The data written into the memory cell array (11) is transferred to the main memory region (2). In the main memory region (2), the memory cells (10) of the memory cell array (21) corresponding to the data transferred from the high-speed write-in region (1) are reset to the non-storage state, after which only the memory cells (10) specified for the storage state are set and all the memory cells (10) in the high-speed write-in region (1) are reset to the non-storage state, i.e., the initial state. With this configuration, the function of high-speed write-in of data and the function of holding data in the nonvolatile state can be realized only by the ReRAM without using a separate memory chip such as SRAM in combination and a high-speed write-in of data can be performed by one write-in command.</p> |
