发明名称 METHOD FOR GROWING ARRAYS OF ALIGNED NANOSTRUCTURES ON SURFACES
摘要 The invention provides methods for growing an array of elongated nanostructures projecting from a surface. The nanostructures of the array are aligned substantially perpendicularly to the surface. In one aspect of the invention, the diameter of the nanostructures is between 10 nm and 200 nm. The methods of the invention can produce nanostructure growth at temperatures less than 350 degrees Celsius. Alignment of the nanostructures does not rely on epitaxial growth from a single crystal substrate, allowing a variety of substrates to be used.
申请公布号 WO2008097321(A3) 申请公布日期 2008.10.09
申请号 WO2007US70428 申请日期 2007.06.05
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;BETTGE, MARTIN;BURDIN, STEPHAN;MACLAREN, SCOTT;PETROV, IVAN;SAMMANN, ERNIE 发明人 BETTGE, MARTIN;BURDIN, STEPHAN;MACLAREN, SCOTT;PETROV, IVAN;SAMMANN, ERNIE
分类号 B82B3/00;B82B1/00;H01L23/48 主分类号 B82B3/00
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