METHOD FOR GROWING ARRAYS OF ALIGNED NANOSTRUCTURES ON SURFACES
摘要
The invention provides methods for growing an array of elongated nanostructures projecting from a surface. The nanostructures of the array are aligned substantially perpendicularly to the surface. In one aspect of the invention, the diameter of the nanostructures is between 10 nm and 200 nm. The methods of the invention can produce nanostructure growth at temperatures less than 350 degrees Celsius. Alignment of the nanostructures does not rely on epitaxial growth from a single crystal substrate, allowing a variety of substrates to be used.
申请公布号
WO2008097321(A3)
申请公布日期
2008.10.09
申请号
WO2007US70428
申请日期
2007.06.05
申请人
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;BETTGE, MARTIN;BURDIN, STEPHAN;MACLAREN, SCOTT;PETROV, IVAN;SAMMANN, ERNIE