发明名称 WINDOW WITH APERTURE COPING WITH LIGHTING TO ACTIVE REGION OF PATTERNING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a system and a method that maximizes an active region of a patterning device while reducing lithography errors caused by excessive light. <P>SOLUTION: The system comprises a patterning device having an active region, a first dark border region 801 which is disposed on the surface of the patterning device and surrounds the active region 502, and a second dark border region 803 which is separated from the surface of the patterning device and surrounds the active region 502. Light exposed on the active region passes through an aperture 805 of the first dark border region and uses at least one of the first dark border region and the second dark border region, so that the excessive light exposed to the outside of the active region is reduced. The second dark border region is combined with a window covering the patterning device. The first and second dark border regions employ light absorbing materials, light reflection films and diffraction gratings for interference so that unnecessary light may be canceled. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008244476(A) 申请公布日期 2008.10.09
申请号 JP20080061039 申请日期 2008.03.11
申请人 ASML HOLDING NV 发明人 HINTERSTEINER JASON D
分类号 H01L21/027;G02B5/00;G03F7/20 主分类号 H01L21/027
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