| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and a system, which use a linear accelerator process for manufacture of free-standing layers of materials. <P>SOLUTION: The method includes subjecting a surface region of a semiconductor substrate to first multiple high energy particles generated using a linear accelerator and provided at a first implant angle to form a region of multiple gettering sites within a cleave region, the cleave region being provided beneath the surface region to define a material layer to be detached, and the semiconductor substrate being maintained at a first temperature. The method includes subjecting the surface region of the semiconductor substrate to second multiple high energy particles generated using the linear accelerator and provided at a second angle, the second multiple high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. The second multiple high energy particles are provided at the second implant angle. The semiconductor substrate is maintained at a second temperature higher than the first temperature. Subsequently, the detachable material layer is freed using a cleaving process. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
