| 摘要 |
PROBLEM TO BE SOLVED: To provide equipment for treating a substrate in which uniformity of plasma treatment applied to the substrate can be enhanced. SOLUTION: The equipment 10 for treating a substrate comprises a chamber 11 for containing a wafer W, a susceptor 12 arranged in the chamber 11 and mounting the wafer W contained in the chamber 11, an annular focus ring 24 arranged to surround the periphery of the wafer W above the susceptor 12, and a nozzle 39 arranged above the focus ring 24 in the reaction chamber 17 of the chamber 11 and connected with a high temperature gas inlet section 38 wherein high temperature gas is injected toward at least a part of the focus ring 24 from the nozzle 39 before the wafer W to be etched is contained in the chamber 11. COPYRIGHT: (C)2009,JPO&INPIT |
