| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device, along with its manufacturing method, capable of increasing the number of CNTs by enlarging the surface area of a catalyst layer and a formation condition of a thin film which sufficiently functions as a catalyst for forming the CNT, having an ohmic contact even after hot heat treatment after contact layer formation. SOLUTION: The manufacturing method of a silicon carbide semiconductor device includes a process (a) in which an impurity is introduced into the surface of an SiC 1, a process (b) in which after introduction of impurity, the surface of SiC 1 is annealed to form a rough part 4 on the surface of SiC 1, and a process (c) in which with the surface of the rough part 4 of the SiC 1 as a base material, CNT 7 is formed thereon. The number of CNT 7 is increased by enlarging the surface area of a contact electrode layer 5. COPYRIGHT: (C)2009,JPO&INPIT |
