| 摘要 |
PROBLEM TO BE SOLVED: To provide a new method capable of growing a flat, epitaxial ZnO thin film by MOCVD. SOLUTION: When growing a zinc oxide thin film by the MOCVD (organic metal deposition method) of dialkylzinc organic metal gas, oxygen, and feed gas, gas containing hydrogen is used as the carrier gas of the dialkylzinc organic metal gas, a reaction region is set to a reducing atmosphere by atmosphere formation gas made of the gas containing hydrogen, the feed gas is supplied onto the substrate surface, the feed gas passing above the substrate is not allowed to flow back to the substrate again, and substrate temperature is modulated periodically by a laser heating method. COPYRIGHT: (C)2009,JPO&INPIT
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