METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL

摘要

A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a Ill-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b) attaching a Ga face of the Ill-nitride semiconductor device structure to a host substrate, and (c) removing the substrate to expose the N-face surface of the III -nitride semiconductor device structure. An N-polar (000-1) oriented III -nitride semiconductor device is also disclosed, comprising one or more (000-1) oriented nitride layers, each having an N-face opposite a group Ill-face, wherein at least one N-face is an at least partially exposed N-face, and a host substrate attached to one of the group Ill-faces.