| 摘要 |
<p>In a second direction, an n-channel MOS transistor and an expanding film (11) are adjacent to each other in a planar view. For this, the n-channel MOS transistor receives a positive stress from the expanding film (11) in a direction to expand its channel length. As a result, positive distortion is caused in an electron moving direction in the n-channel MOS transistor. Meanwhile, in the second direction, a p-channel MOS transistor and the expanding film (11) are shifted to each other. For this, the p-channel MOS transistor receives a positive stress in a direction to narrow a channel length from the expanding film (11). As a result, a positive compressing distortion is caused in a hole moving direction. Thus, both turned-on electric currents of the n-channel MOS transistor and the p-channel MOS transistor can be improved.</p> |
