| 摘要 |
The invention relates to a device that comprises a memory circuit with memory cells that use floating gate storage transistors, which are conventionally called non-volatile memory cells. A particular embodiment relates to a teletext circuit. A teletext processing circuit comprising a decoder logic circuit and a memory circuit integrated together in an integrated circuit, the memory circuit comprising memory cells for storing teletext page data, the memory cells comprising floating gate storage transistors to store the teletext page data. The page data from memory is used to control the content of displayed teletext images. |
