| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP technology, wherein a conventional abrasive material is used, and a polishing pressure is made low, namely even if CMP is given to a substrate with a Low-k film which is brittle in resistance to the pressure, such a brittle film is not damaged, and rubbing speed is high. <P>SOLUTION: In a CMP method in which the CMP is given by a polishing pad to a surface of the film provided on the substrate, the method includes a step in which the polishing pad whose centerline average roughness Ra of a surface is 7 to 11 μm is put into contact with the surface of the film, and a step in which the polishing pressure to the film exerted by the polishing pad is controlled to be 3 to 7 kPa. <P>COPYRIGHT: (C)2009,JPO&INPIT |
