发明名称 PLASMA PROCESSING EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To improve the degree of freedom in plasma density distribution control without requiring extra modification of the electrode structure or a large scale external device such as a magnetic field device additionally. <P>SOLUTION: An electrostatic chuck 38 on the major surface of a susceptor 12 has a central conductor 42 and a peripheral conductor 44 split in the radial direction and embedded in a filmlike dielectric 40. The central conductor 42 is connected electrically with an external DC power supply 46 through a central impedance adjusting portion 64. The peripheral conductor 44 is connected electrically with other external DC power supply 54 through a peripheral impedance adjusting portion 66 and an impedance circuit 56. The ratio of RF electronic currents radiated, respectively, from the central portion and the peripheral portion of the major surface of the susceptor 12 toward a processing space S can be adjusted arbitrarily and variably at the central and peripheral impedance adjusting portions 64 and 66. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008244063(A) 申请公布日期 2008.10.09
申请号 JP20070081193 申请日期 2007.03.27
申请人 TOKYO ELECTRON LTD 发明人 YAMAZAWA YOHEI
分类号 H01L21/3065;C23C16/509;H05H1/46 主分类号 H01L21/3065
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