| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for achieving a fine effective emitter width in a bipolar transistor, preventing the increase of emitter resistance and facilitating the improvement of high frequency characteristics, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has: a first conductivity type collector layer 15 formed on a silicon substrate 10; a second conductivity type base extraction region 16 formed in the peripheral region of the surface part of collector layers 13 and 15; a second conductivity type base layer 17 formed on the collector layer 15 and on the base extraction region 16; and a first conductivity type emitter layer 18 formed in the surface region of the base layer 17. By such a configuration, since the base extraction region 16 is arranged under the base layer 17, the thickness of an inter-layer dielectric 20 formed between the base layer 17 and the emitter layer 18 is reduced, the aspect ratio of an emitter opening is reduced, the thickness of the emitter layer 18 is reduced, and the width of the emitter layer 18 is reduced. In such a manner, the increase of the emitter resistance is suppressed, and an emitter-base capacitance is reduced. COPYRIGHT: (C)2009,JPO&INPIT |
