| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-cost vertical semiconductor element satisfying both high voltage resistance and low-ON resistance and also provide a method for manufacturing the vertical semiconductor element. SOLUTION: The vertical semiconductor element includes a conductive substrate 1, a nitride compound semiconductor layer 4 formed on the conductive substrate 1 to expose a part of the front surface of the conductive substrate 1, a buffer layer 3 formed between the conductive substrate 1 and the nitride compound semiconductor layer 4, a first electrode 7 formed on the nitride compound semiconductor layer 4, a second electrode 11 formed at a lower surface of the conductive substrate 1, and a bypass section 5' for electrically connecting at least a part of the exposed area on the front surface of the conductive substrate 1 and at least a part of a side surface of the nitride compound semiconductor layer 4 and allowing at least a part of current flowing in the vertical direction between the first electrode 7 and the second electrode 11 to pass. COPYRIGHT: (C)2009,JPO&INPIT |
