| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, capable of forming a hole or a groove having a desired shape in an etching process. SOLUTION: The manufacturing method of a semiconductor device enables to form a first hole and a second hole having an aspect ratio lower than that of the first hole on an insulating film formed on a semiconductor substrate. The manufacturing method includes executing a first etching processing for etching the insulating film and a second etching processing for etching the insulating film under a condition where the speed of depositing a deposited layer to be formed on the surface of the insulating film is lower than the speed of the first etching processing. COPYRIGHT: (C)2009,JPO&INPIT
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