LOW TEMPERATURE POLY OXIDE PROCESSES FOR HIGH-K/METAL GATE FLOW

摘要

An integrated circuit device is disclosed as comprising a feature that is susceptible to oxidation. A poly-oxide coating is used over the feature susceptible to oxidation to protect the feature susceptible to oxidation from oxidizing. Various method can be used to form the poly-oxide coating include conversion of a ploy-silicon coating using UV O₃ low temperature oxidation and plasma nitridation using either decoupled plasma nitridation or NH₃ annealing.