SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

Provided is a semiconductor device comprising a gate electrode (13) over a semiconductor substrate, a channel region (CH) formed in a semiconductor substrate region below the gate electrode, and a strain creating layer (21) for applying a stress to the channel region. The strain to be applied to the source terminal (A) of the channel region has an absolute value larger than that of the strain to be applied to the drain terminal. In a satisfactory example of constitution, the semiconductor device further comprises a side wall spacer (17) formed in the side wall of the gate electrode, and a side wall width (W1) formed on the source side of the gate electrode is smaller than a side wall width (W2) formed on the drain side of the gate electrode.