METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent resistance increase in a gate electrode and to easily perform a gate patterning process by reducing the resistivity as suppressing the increase of roughness. A method for manufacturing a semiconductor device comprises the following steps of: forming a gate insulation layer(102), a conductive layer(104) and a metal layer(106) on a semiconductor substrate(100); performing an ion implantation process to form an ion implantation region in the boundary between the conductive layer and the metal layer; performing a flash heat-treatment for the ion-implanted semiconductor substrate; and patterning the metal layer, the conductive layer and the gate insulation layer. The ion implantation process is performed by using one of phosphor(P), arsenic(As), germanium(Ge) or silicon(Si) ion.