| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit capable of changing a resistance value of a power source resistor and a capacitance value of decoupling at a minimum cost. SOLUTION: In the structure of Fig.6(A), a metal laminate composed of three layers which contact with a polysilicon layer PL are formed at the left end, the right end, and the middle point of the polysilicon layer PL, respectively. On the third metal layer M3 of the metal laminate at the middle point of the polysilicon layer PL, a via contact part is formed with a power source line 9 composed of a fourth metal layer and formed in contact with the via contact part. Thus, almost a half of the polysilicon layer PL is inserted in the power source line 9 as a power source resistor R. In the structure of Fig.6(B), a via contact part is formed on the third metal layer M3 of the metal laminate on the left end of the polysilicon layer PL with the power source line 9 composed of the fourth metal layer and formed in contact with the via contact thereon. Thus, almost the entire polysilicon layer PL is inserted in the power source line 9 as the power source resistor R. COPYRIGHT: (C)2009,JPO&INPIT |
