| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device package with a die receiving through-hole and a through-hole connecting structure. <P>SOLUTION: The semiconductor device package 100 comprises a substrate 102 having the die receiving through-hole 105, the through-hole connecting structure 114, a first conductive pad 113 on an upper surface of the substrate, and a second conductive pad 115 on a lower surface of the substrate. A die is disposed within the die receiving through-hole. A first adhesion material 106 is formed under the die and a second adhesion material 107 is filled in the gap between the die and the sidewall of the die receiving through-hole of the substrate. Further, a bonding wire 112 is formed to couple a bonding pad 108 and the first conductive pad. A dielectric layer 118 is formed on the bonding wire, the die, and the substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT |
