| 摘要 |
PROBLEM TO BE SOLVED: To obtain an amplifier capable of avoiding destruction or deterioration even when a high frequency signal of large power is inputted, while keeping excellent receiving noise performance. SOLUTION: A resistor 21 for gate voltage suppression is provided, of which the one terminal is connected with a gate terminal of a Schottky junction FET 13 via a gate bias line 16 and of which the another terminal is connected with a gate voltage terminal 20 of the Schottky junction FET 13. Thus, when a gate rectifying current that is a forward current is generated, a potential drop is generated by the resistor 21 for gate voltage suppression, and a gate voltage of the Schottky junction FET 13 is reduced. COPYRIGHT: (C)2009,JPO&INPIT
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