| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an SrRuO<SB>3</SB>crystal film having low resistance equal to that of a bulk film by a sputtering process having excellent mass-productivity, and to provide a sputtered SrRuO<SB>3</SB>crystal film having low resistance equal to that of a bulk film. SOLUTION: Regarding the method for producing an SrRuO<SB>3</SB>film, SrRuO<SB>3</SB>is deposited on a substrate in an oxygen-containing atmosphere under the pressure in the range of 8 to <300 Pa, preferably, in the range of 16 to 130 Pa by a sputtering process where a target and the substrate are confronted. COPYRIGHT: (C)2009,JPO&INPIT
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