发明名称 |
METHOD FOR SENSING NEGATIVE THRESHOLD VOLTAGES IN NON-VOLATILE STORAGE USING CURRENT SENSING |
摘要 |
Current sensing is performed in a non-volatile storage device for a selected non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.
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申请公布号 |
US2008247238(A1) |
申请公布日期 |
2008.10.09 |
申请号 |
US20070771982 |
申请日期 |
2007.06.29 |
申请人 |
NGUYEN HAO THAI;LEE SEUNGPIL;MUI MAN LUNG;KHALID SHAHZAD;SO HOCK;GOVINDU PRASHANTI;MOKHLESI NIMA;SEKAR DEEPAK CHANDRA |
发明人 |
NGUYEN HAO THAI;LEE SEUNGPIL;MUI MAN LUNG;KHALID SHAHZAD;SO HOCK;GOVINDU PRASHANTI;MOKHLESI NIMA;SEKAR DEEPAK CHANDRA |
分类号 |
G11C16/06;G11C11/4091 |
主分类号 |
G11C16/06 |
代理机构 |
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地址 |
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