N-FACE HIGH ELECTRON MOBILITY TRANSISTORS WITH LOW BUFFER LEAKAGE AND LOW PARASITIC RESISTANCE
摘要
A method for fabricating nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, comprising isolating a buffer from a substrate with an AlGaInN nucleation layer to suppress impurity incorporation from the substrate into the buffer. A method for fabricating N-face nitride-based electronic devices with low parasitic resistance and high breakdown, comprising capping a device structure with a conductive layer to provide extremely low access and/or contact resistances, is also disclosed.
申请公布号
WO2008121980(A1)
申请公布日期
2008.10.09
申请号
WO2008US58938
申请日期
2008.03.31
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;MISHRA, UMESH KUMAR;PEI, YI;RAJAN, SIDDHARTH;WONG, MAN HOI
发明人
MISHRA, UMESH KUMAR;PEI, YI;RAJAN, SIDDHARTH;WONG, MAN HOI