Fotoelektrische Wandlervorrichtung

摘要

A photoelectric conversion device in which a plurality of crystal semiconductor particles 2 of a first conductivity type having a surface layer thereof a semiconductor part 4 of a second conductivity type are bonded at spaced intervals on a surface of a conductive substrate 1, an insulating layer 3 is formed on the conductive substrate 1 extending between the semiconductor particles 2 and 2, a light-transmitting conducting layer 5 is formed on the insulating layer 3 and the crystal semiconductor particles 2, and a collector electrode 7 is formed on a surface of the light-transmitting conducting layer 5. The collector electrode 7 is comprised of a conductor plate with a plurality of through-holes 40 to admit external light into the crystal semiconductor particles 2. The light-transmitting light collection layer 8 is disposed on the light-transmitting conducting layer 5 and the collector electrode 7. Simple manufacturing steps eliminate shadow loss while suppressing resistance loss, thereby providing the high-efficiency photoelectric conversion device.