发明名称 HALBLEITERBAUELEMENT UND VERFAHREN MIT NANORÖHREN-KONTAKTEN
摘要 A semiconductor device includes at least one semiconductor layer, a metal layer in electrical contact with the semiconductor layer, and a carbon nanotube contact layer interposed between the metal layer and the semiconductor layer. The contact layer electrically couples the metal layer to the semiconductor layer and provides a semiconductor contact having low specific contact resistance. The contact layer can be a substantially optically transparent layer in at least a portion of the visible light range.
申请公布号 DE602005009333(D1) 申请公布日期 2008.10.09
申请号 DE20056009333T 申请日期 2005.02.22
申请人 UNIVERSITY OF FLORIDA RESEARCH FOUNDATION 发明人 RINZLER, ANDREW GABRIEL;PEARTON, STEPEHEN J.
分类号 H01L21/00;H01L21/285;H01L29/22;H01L33/14;H01L33/16;H01L33/32;H01L33/40;H01S5/042;H01S5/323 主分类号 H01L21/00
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