| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a two-layer resist film for obtaining a resist pattern in which the undercut profile can be controlled to prevent formation of a continued undercut portion under a space between patterns, through one exposure and development, and thereby, easily forming a film layer with no fin even in a fine pattern having a line/space width of 10 μm/10 μm or less on a substrate surface, relating to a method for forming a vapor deposition and/or sputtering film by a lift-off process, and to provide a method for forming a pattern by using the two-layer resist film. <P>SOLUTION: A two-layer laminate film is formed by applying a specified resin composition 1 and a specified positive radiation-sensitive resin composition 2 on a substrate surface. The resist comprising the two-layer laminate film is exposed once to form a fine pattern having an undercut profile in the cross section. Then the pattern is used as a mask material to vapor deposit and/or sputter an organic or inorganic thin film and subjected to a lift-off process to form a pattern of a desired profile. <P>COPYRIGHT: (C)2009,JPO&INPIT |
