| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a nitride semiconductor light-emitting element that can suppress deterioration in the crystallinity of an active layer and have large current density and high luminous efficiency. <P>SOLUTION: The semiconductor light-emitting element includes an n-type semiconductor layer and an active layer, has a first p-type semiconductor layer between the n-type semiconductor layer and the active layer, and has a second p-type semiconductor layer at a side opposite to a side having the first p-type semiconductor layer when viewed from the active layer. The nitride semiconductor light-emitting element includes an n-type nitride semiconductor layer and a nitride semiconductor active layer, has a first p-type nitride semiconductor layer between the n-type nitride semiconductor layer and the nitride semiconductor active layer, and has a second p-type nitride semiconductor layer at a side opposite to a side having the first p-type nitride semiconductor layer when viewed from the nitride semiconductor active layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
