| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method by which miniaturization of the entire semiconductor device is realized and high cooling effect is obtained, without requiring complex manufacturing processes. SOLUTION: A cooling element utilizing the Peltier effect consists of a semiconductor chip 1 in which an N-type semiconductor region 4 and a P-type semiconductor region 5, having common element formation surface 1a and rear surface 1b are formed; an electrode pad 21 formed on the element formation surface 1a of the N-type semiconductor region 4 of the semiconductor chip 1; an electrode pad 22 formed on the element formation surface 1a of the P-type semiconductor region 5 of the semiconductor chip 1; and a conductive layer 3 formed on the rear surface 1b of the semiconductor chip 1. COPYRIGHT: (C)2009,JPO&INPIT
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