| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical device for reducing a resistance, while suppressing the unwanted diffusion of impurity, and to provide a method for manufacturing the same. SOLUTION: Not only Zn as p-type dopant but also Fe is doped in a p-type clad layer 6, and Zn concentration is 1.5×10<SP>18</SP>cm<SP>-3</SP>, and Fe concentration is 1.8×10<SP>17</SP>cm<SP>-3</SP>. As impurity forming a deep acceptor level, Fe is doped to a semi-insulating embedded layer 10, and the concentration is 6.0×10<SP>16</SP>cm<SP>-3</SP>. Thus, Fe concentration in the p-type clad layer 6 is three times as high as the Fe concentration in the embedded layer 10. COPYRIGHT: (C)2009,JPO&INPIT
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