发明名称 ION IMPLANTATION AMOUNT MEASURING METHOD AND ION IMPLANTATION AMOUNT ESTIMATING METHOD
摘要 PROBLEM TO BE SOLVED: To highly accurately obtain an ion implantation amount, even when the ion implantation amount is relatively small and an ion implantation depth is very shallow. SOLUTION: An object substrate constituted by laminating a plurality of respectively different materials, for which the materials other than the material of the top surface layer among the plurality of materials are resistant to a liquid chemical, with which the material of the top surface layer to which ions are implanted can be wet-etched is provided. The top surface layer is selectively etched using the liquid chemical, and the liquid chemical after etching, in which the components of the top surface layer including the implanted ions are mixed, is recovered; and by either atomic absorption analysis or inductively coupled plasma mass spectrometry, the amount of the ions contained in the recovered liquid chemical after etching is measured as the amount of the ions implanted to the object substrate. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008244231(A) 申请公布日期 2008.10.09
申请号 JP20070084077 申请日期 2007.03.28
申请人 MITSUI ENG & SHIPBUILD CO LTD 发明人 OGURA MITSURU;OISHI TAKANOBU;TSUJI YASUYUKI
分类号 H01L21/265;H01L21/66 主分类号 H01L21/265
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