| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage MOS transistor for simplifying a mask process and reducing a layout area, and to provide a manufacturing method of the high breakdown voltage MOS transistor. SOLUTION: The high breakdown voltage MOS transistor comprises: a gate insulation film formed on a substrate; a gate electrode formed on the gate insulation film; a drain region formed in the substrate positioned at one side of the gate electrode; a source region formed in the substrate positioned at the other side of the gate electrode; a deposition drain layer that is formed on the drain region and is electrically connected to the drain region via an impurity diffusion region; an insulation film for composing a first sidewall spacer formed on a sidewall at the side of the source region of the gate electrode; and an insulation film that is formed at a sidewall at the side of the drain of the gate electrode and composes a second sidewall spacer in contact with the sidewall of the deposition drain layer. COPYRIGHT: (C)2009,JPO&INPIT
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