SURFACE-EMITTING SEMICONDUCTOR OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor optical device enabling a high speed operation. SOLUTION: The surface-emitting semiconductor optical device 10 includes: a first conductive-type first DBR part 14 arranged on a first conductive-type GaAs substrate 12; an active layer 18 disposed on the first DBR part 14; a second DBR part 28 installed on the active layer 18; a current implantation layer 22 which is arranged between the first DBR part 14 and the second DBR part 28 and implants current to the active layer 18; and a current blocking layer 24 installed between the first DBR part 14 and the second DBR part 28 and is formed of undoped GaInP or undoped AlGaInP disposed on a side of the current implantation layer 22. COPYRIGHT: (C)2009,JPO&INPIT