MAGNETIC RANDOM ACCESS MEMORY AND RECORDING DEVICE EQUIPPED WITH THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetic random access memory whose manufacture is easy and in which a recording state in a multilevel is realized. SOLUTION: The magnetic random access memory 2 is provided with magnetic resistance elements 30a and 30b in the same plane of a magnetic resistance element region 20 of a cell 10. Since shape magnetic anisotropy differs in the magnetic resistance elements 30a and 30b, sizes of external magnetic fields differ when magnetization is inverted by the external magnetic field. An intermediate state of a high resistance state and a low resistance state of the cell are allocated to a magnetization state generated in the cell 10 by inversion of magnetization of the magnetic resistance element 30a or 30b. COPYRIGHT: (C)2009,JPO&INPIT