| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device as a hetero-junction field effect transistor that copes with high output and high breakdown voltage, and also to provide its manufacturing method. SOLUTION: The semiconductor device is a hetero-junction field effect transistor, and it is provided with: an Al<SB>x</SB>Ga<SB>1-x</SB>N channel layer 3 that is formed on a substrate at composition ratio x (0<x<1) of Al; an Al<SB>y</SB>Ga<SB>1-y</SB>N barrier layer 4 that is formed on the channel layer 3 at composition ratio y (0<y≤1) of Al; and a source/drain electrode 6 and a gate electrode 7 that are formed on the barrier layer 4. The composition ratio y is larger than the composition x. COPYRIGHT: (C)2009,JPO&INPIT
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