| 摘要 |
PROBLEM TO BE SOLVED: To provide a reproduction element of a novel structure capable of obtaining a high S/N ratio with a high MR ratio, and suppressing output fluctuations. SOLUTION: This current-perpendicular-to-plane reproduction element is provided with a magneto-resistance effect element including a magnetization fixed layer, a magnetization free layer, an insulating layer disposed between the magnetization fixed layer and the magnetization free layer, and a composite spacer layer including a current path penetrating the insulating layer, a bias mechanism for stabilizing the magnetization free layer, a shielding mechanism for securing reproduction resolution, and upper and lower electrodes for energizing the magneto-resistance effect element in an in-plane perpendicular direction. Area resistance (RA: unitΩ×μm<SP>2</SP>) is set to the following relationship with the track width (TW: unit nm) and the gap length (GAP: unit nm) of the magneto-resistance effect element: 0.00062×√(GAP)×TW+0.06 or less, or area resistance (RA: unitΩ×μm<SP>2</SP>) is set to the following relationship with a used linear recording density (kBPI: unit kPBI) and the track width (TW: unit nm) of the magneto-resistance effect element: 0.14×TW(nm)/√(kBPI)+0.06 or less. COPYRIGHT: (C)2009,JPO&INPIT
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