发明名称 SPUTTERING APPARATUS AND SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus of high use efficiency of a target and a magnetron sputtering method. SOLUTION: In a vacuum chamber provided with a cathod electrode, a target is arranged on the surface of a cathode electrode and a substrate is arranged in a position opposite to the cathode electrode. And, a first annular magnet 305 is annularly arranged so as to surround a central part on the rear of the cathode electrode, a second annular magnet 307 is annularly arranged so as to surround the first annular magnet 305 and a third annular magnet 309 is annularly arranged so as to surround the second annular magnet 307. The first annular magnet 305 generates magnetic fields perpendicularly to the target. The second annular magnet 307 generates the magnetic fields in the same direction as that of the first annular magnet 305 to the target and a third annular magnet 307 generates the magnetic fields in the reverse direction as that of the second annular magnet 307. When a high voltage is applied between the target and the substrate, the deepest erosion is formed in the outer edge of the target. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008240095(A) 申请公布日期 2008.10.09
申请号 JP20070084322 申请日期 2007.03.28
申请人 SHOWA SHINKU:KK 发明人 TOKUNAGA KEIYA
分类号 C23C14/35 主分类号 C23C14/35
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