发明名称 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD
摘要 A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: (x) an alkali-soluble group; (y) a group capable that decomposes by action of an alkali developer to undergo an increase in a solubility of the resin (C) in an alkali developer; and (z) a group that decomposes by action of an acid, wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.
申请公布号 US2008248425(A1) 申请公布日期 2008.10.09
申请号 US20080056330 申请日期 2008.03.27
申请人 FUJIFILM CORPORATION 发明人 NISHIYAMA FUMIYUKI;KANDA HIROMI
分类号 G03F7/039;G03F7/20 主分类号 G03F7/039
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