| 摘要 |
PURPOSE:To improve the electrical connection between metallic electrodes with excellent heat resistance and conductivity and semiconductor regions by a method wherein compound layers with energy gap shorter than that of compound substrate are laid between semiconductor regions on the surface of compound substrate and electrodes connected to the semiconductor regions. CONSTITUTION:n<+> type conductive layers 5 comprising compound of e.g. Ga, In, As and Sb epitaxially grown on the surface of an n<+> type semiconductor region 4 as source.drain region are buffer layers to ohmic connect electrodes 6 comprising Al layers connected to the surface of conductive layers 5 to n<+> type semiconductor region 4. The thickness of conductive layers 5-1-5n is around 1 - several 10nm and the lower the layer, the more Ga and As are contained and the less In and Sb are contained while the higher the layer, the compounds are contained vice versa. The level of energy barrier at the junction of regions 4 and conductive layers 5 as well as that between the conductive layer 5n and the Al layer electrodes 6 are not exceeding around 0.1eV while the miss alignment of grids between the conductive layer 5-1 and the conductive layer 5n and the level of energy barrier are respectively not exceeding around 1% and 0.1eV. Through these procedures, effective level of energy barrier between the electrodes 6 and the semiconductor regions 4 is lowered by laying the conductive layers 51-5n between the electrodes 6 and the semiconductor regions 4.
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