| 摘要 |
PURPOSE:To minimize the effect of source.drain diffused layer resistance preventing the driving capacity of a transistor from deteriorating while reducing a cell space by a method wherein the gate length of gate parts on the opposing side of gate interconnection electrodes is made shorter than that of gate parts near the gate interconnection electrodes. CONSTITUTION:Gate interconnection electrodes 2a, 2a are respectively provided outside the central parts of opposing short sides of a rectangular cell region 1 while band type gate electrodes 2, 2 conductively connected to the interconnection electrodes 2a, 2a are mutually bent in the long side direction of the cell region 1 extending along the inside of long sides out of the short sides. A source interconnection 4a is provided on the central part of a source diffused layer 4 held by the two gate electrodes 2, 2 while drain interconnection electrodes 5a, 5a are respectively provided on the drain diffused layers 5, 5 in the shoulder parts of gate electrodes 2, 2. Furthermore, the band width of gate electrodes 2, 2 (almost equivalent to the channel length (or gate length) immediately below the gate electrodes 2, 2) is diminished stepwise in proportion to the extension of gate electrodes 2, 2.
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