SEMICONDUCTOR FABRICATION WITH CONTACT PROCESSING FOR WRAP-AROUND FLANGE INTERFACE

摘要

PROBLEM TO BE SOLVED: To ensure reliable coupling at a butt joint interface of a lead contacting of a circuit.

SOLUTION: A flange interface for wrap-around contact regions formed in fabricating semiconductor devices brings a durable and reliable electrical bond. A first layer having a first material is formed on a first surface of a wafer. A trench is formed from a second surface of the wafer so that a portion of the first layer is exposed in the trench. A second layer having a second material is formed on the second surface of the wafer so that a portion of the second layer contacts the portion of the first layer exposed in the trench. The wafer is separated through the trench. The trench may be formed by cutting the second surface of the wafer in an area where the trench is to be formed. The wafer may then be etched so that the trench is formed.

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