| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which a MOS transistor and a lateral bipolar transistor, having a fully ensured breakdown voltage, are formed on the same SOI substrate. SOLUTION: A semiconductor apparatus has a MOS transistor 51, having an n-type source region 62s and an n-type drain region 62d formed on a buried oxide film 14 and by which a p-type channel region 60 is sandwiched, and a gate electrode 54 formed on the channel region 60 via a gate oxide film 52; and a bipolar transistor 81, having an n-type collector region 92c and an n-type emitter region 92e, formed so as to sandwich a p-type base region 90, a p-type base contact region 89 adjacent to the base region 90 in the channel width direction, and a dummy pattern 84 formed on the base region 90 via a second oxide film 82. COPYRIGHT: (C)2009,JPO&INPIT
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