| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element which avoids the employment of a laminated structure of a pin layer, a spacer layer and a free layer unlike a prior art magnetoresistive effect element, and also to provide a magnetic head and a magnetic memory using the element. SOLUTION: In the magnetoresistive effect element including first and second magnetic layers formed to vertically sandwich a spacer formed of at least one of an oxide, nitrogen, an oxinitride and metal therebetween, magnetic domain control is carried out by a bias magnetic field from a current bias generator located adjacent to a spacer layer or by exchange coupling from an exchange coupling layer formed contacting with both ends of the spacer layer on its main surface other than a reproduction magnetism-sensitive part, to thereby suppress the generation of magnetic noise. COPYRIGHT: (C)2009,JPO&INPIT
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